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Summer school on wide-bandgap nitride devices
Nitride semiconductor technology - from substrate to application
(Summerschool was organised July 8-11, 2019)
Semiconductor power devices are a central part of any power conversion circuit and are ubiquitous in our daily lives: they transform voltages for a multitude of appliances, such as from the 220V AC mains to a 12V DC end-user appliance. Efficient power conversion systems are at the heart of the worldwide effort for a green economy, since they can minimize losses and save energy.
Systems employing wide bandgap semiconductors such as GaN-based devices allow for the implementation of electronics operating at high-switching speed, higher voltages, higher temperatures while maintaining high efficiencies. To unlock the full potential of GaN-based devises, we need to study and understand all the different aspects of the formed devices, from growing the raw material to packaging and a demonstration of its potential in a final device. In this course, we focus on two applications: high voltage power applications and densely integrated materials for CMOS drivers. The attendees will learn on the different aspects in creating such wide-bandgap devices:
- the challenges for growing wide bandgap materials and how semiconductor defects influence the final material.
- how the semiconductor material is being implemented in a final device, and how the processing can significantly improve the characteristics of the devices.
- how the fabricated devices can still fail, how to investigate these failures and how to categorise the degradation mechanisms.
- how a device is implemented in an consumer product, and the impact of specific ambient loads such as temperature on device performance.
This summer school is co-organised by the H2020 programmes InRel-NPower and GaNonCMOS.
Programme
Click on the dates below to view our intended program of our summer school.
The program will be updated in due time with more presentation information.
09:00 Introduction to the summer school
09:05 Keynote by O. Ambacher, University of Freiburg
GaN-based power electronics: current performance and future potential
read more about this talk here
10:45 Coffee break
11:00 J. Derluyn, EpiGaN, and G. Lukin, Fraunhofer IISB
Hetero-epitaxy of GaN on Si for electronic applications (J. Derluyn)
read more about this talk here
Growth of GaN bulk crystals for electronic applications (G. Lukin)
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13:00 Lunch break
14:30 P. Moens, ONSemiconductor
Semiconductor Power Devices: from junction to material engineering.
read more about this talk here
16:30 Coffee break
Poster presentations by participants
18:00 Closing of 1st day of summer school
09:00 G. Meneghesso, University of Padua
Reliability of GaN-based power devices
read more about this talk here
11:00 Coffee break
11:15 M. Rittner, Robert Bosch
Aspects on Assembly and Interconnection Technologies of WBG Power Modules
read more about this talk here
12:45 Lunch break
14:00 K. Kriegel, Siemens
Industrial applications of wide-bandgap power electronics
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15:30 Coffee break
16:00 Short oral presentations by participants.
18:00 Closing of 2nd day of summer school
09:00 Keynote by S. O'Driscoll, Tyndall National Institute
read more about this talk here
10:30 Coffee break
11:00 N. Akil, PNO Innovation
Overview on the available EU funding programmes for R&D&I
read more about this talk here
12:30 Lunch break
14:00 Company visit to
ONSemiconductor, Oudenaarde
09:00 G. Weis, AT&S
Embedded inductors for power converter applications
read more about this talk here
10:30 Coffee break
11:00 R. Lerner, X-FAB
Integration of GaN HEMTs on Silicon CMOS
read more about this talk here
12:30 Lunch break
14:00 S. Suchovsky, RECOM
Testing of Power Converters for Industrial Use
read more about this talk here
15:30 Closing of the summer school
Registration
Participation is free of charge, but only a limited number of participants can attend. Interested participants are advised to register in your earliest convenience.
Registration is possible through our registration page. Please register before June 23 2019.
Location
Onderbergen 1
9000 Ghent, Belgium
Flyer
Our flyer can be downloaded here.
Contact
Department of Solid State Sciences, Ghent University
Krijgslaan 281 - Building S12
9000 Gent, Belgium
Phone: +32 (0)9 264 43 54
Acknowledgement
The InRel-NPower project has received funding from the European Union’s Horizon 2020 Research and Innovation program under Grant Agreement No 720527.
The GaNonCMOS project has received funding from the European Union's Horizon 2020 Research and Innovation program under Grant Agreement No 721107.
This summer school has been made possible through the support of Ghent University's Doctoral Schools programme and Flanders State of the Art.