@article {127,
	title = {Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress},
	journal = {Applied Physics Letters},
	volume = {115},
	year = {2019},
	month = {May-07-2021},
	pages = {052103},
	issn = {0003-6951},
	doi = {10.1063/1.5109301},
	url = {http://aip.scitation.org/doi/10.1063/1.5109301},
	author = {Masin, F. and Meneghini, M. and Canato, E. and De Santi, C. and Stockman, A. and Zanoni, E. and Moens, P. and Meneghesso, G.}
}
