@conference {103,
	title = {Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure},
	booktitle = {2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
	year = {2020},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Vienna, Austria},
	doi = {10.1109/ISPSD46842.202010.1109/ISPSD46842.2020.9170170},
	author = {Abid, I. and Kabouche, R. and Medjdoub, F. and Besend{\"o}rfer, S. and Meissner, E. and Derluyn, J. and Degroote, S. and Germain, M. and Miyake, H.}
}
@article {117,
	title = {Vertical breakdown of GaN on Si due to V-pits},
	journal = {Journal of Applied Physics},
	volume = {127},
	year = {2020},
	month = {Jul-01-2020},
	pages = {015701},
	issn = {0021-8979},
	doi = {10.1063/1.5129248},
	author = {Besend{\"o}rfer, S. and Meissner, E. and Tajalli, A. and Meneghini, M. and Freitas, J. A. and Derluyn, J. and Medjdoub, F. and Meneghesso, G. and Friedrich, J. and Erlbacher, T.}
}
@article {123,
	title = {Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment},
	journal = {Microelectronics Reliability},
	volume = {100-101},
	year = {2019},
	month = {Jan-09-2019},
	pages = {113461},
	issn = {00262714},
	doi = {10.1016/j.microrel.2019.113461},
	author = {Borga, M. and Meneghini, M. and Benazzi, D. and Canato, E. and P{\"u}sche, R. and Derluyn, J. and Abid, I. and Medjdoub, F. and Meneghesso, G. and Zanoni, E.}
}
@conference {115,
	title = {Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects},
	booktitle = {International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019},
	year = {2019},
	address = {Minneapolis, United States},
	keywords = {GaN power devices, high voltage, trapping},
	url = {https://hal.archives-ouvertes.fr/hal-02356891},
	author = {Kabouche, R and Abid, I and Zegaoui, M. and Cheng, K and Medjdoub, F.}
}
@conference {108,
	title = {GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current},
	booktitle = {43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019},
	year = {2019},
	address = {cabourg, France},
	url = {https://hal.archives-ouvertes.fr/hal-02356883},
	author = {Borga, M. and Meneghini, M. and Benazzi, D and P{\"u}sche, R and Derluyn, J and Abid, I and Medjdoub, F. and Meneghesso, G. and Zanoni, E.}
}
