@article {126,
	title = {The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors},
	journal = {Scientific Reports},
	volume = {10},
	year = {2020},
	month = {Jan-12-2020},
	doi = {10.1038/s41598-020-73977-2},
	url = {http://www.nature.com/articles/s41598-020-73977-2},
	author = {Besend{\"o}rfer, Sven and Meissner, Elke and Medjdoub, Farid and Derluyn, Joff and Friedrich, Jochen and Erlbacher, Tobias}
}
