@article {111,
	title = {High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications},
	journal = {Materials},
	volume = {13},
	year = {2020},
	month = {Jan-10-2020},
	pages = {4271},
	doi = {10.3390/ma13194271},
	author = {Tajalli, Alaleh and Meneghini, Matteo and Besend{\"o}rfer, Sven and Kabouche, Riad and Abid, Idriss and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio}
}
@article {126,
	title = {The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors},
	journal = {Scientific Reports},
	volume = {10},
	year = {2020},
	month = {Jan-12-2020},
	doi = {10.1038/s41598-020-73977-2},
	url = {http://www.nature.com/articles/s41598-020-73977-2},
	author = {Besend{\"o}rfer, Sven and Meissner, Elke and Medjdoub, Farid and Derluyn, Joff and Friedrich, Jochen and Erlbacher, Tobias}
}
@article {98,
	title = {Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures},
	journal = {physica status solidi (a)},
	volume = {217},
	year = {2020},
	month = {Jan-04-2020},
	pages = {1900687},
	issn = {1862-6300},
	doi = {10.1002/pssa.v217.710.1002/pssa.201900687},
	author = {Kabouche, Riad and Abid, Idriss and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Tajalli, Alaleh and Meneghini, Matteo and Meneghesso, Gaudenzio and Medjdoub, Farid}
}
@article {116,
	title = {Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment},
	journal = {Micromachines},
	volume = {11},
	year = {2020},
	month = {Jan-01-2020},
	pages = {101},
	doi = {10.3390/mi11010101},
	author = {Tajalli, Alaleh and Borga, Matteo and Meneghini, Matteo and De Santi, Carlo and Benazzi, Davide and Besend{\"o}rfer, Sven and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Kabouche, Riad and Abid, Idriss and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio}
}
@article {106,
	title = {The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs},
	journal = {IEEE Electron Device Letters},
	volume = {40},
	year = {2019},
	month = {Jan-07-2019},
	pages = {1060 - 1063},
	issn = {0741-3106},
	doi = {10.1109/LED.5510.1109/LED.2019.2915984},
	author = {Pavlidis, Georges and Kim, Samuel H. and Abid, Idriss and Zegaoui, Malek and Medjdoub, Farid and Graham, Samuel}
}
@article {58,
	title = {GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap},
	journal = {Applied Physics Express},
	volume = {11},
	year = {2018},
	pages = {034102},
	abstract = {We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal{\textendash}insulator{\textendash}semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 {\textmu}A/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-{\textmu}m-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩcenterdotcm2.},
	doi = {10.7567/APEX.11.034102},
	url = {http://iopscience.iop.org/article/10.7567/APEX.11.034102/pdf},
	author = {Dogmus, Ezgi and Zegaoui, Malek and Medjdoub, Farid}
}
