@article {111,
	title = {High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications},
	journal = {Materials},
	volume = {13},
	year = {2020},
	month = {Jan-10-2020},
	pages = {4271},
	doi = {10.3390/ma13194271},
	author = {Tajalli, Alaleh and Meneghini, Matteo and Besend{\"o}rfer, Sven and Kabouche, Riad and Abid, Idriss and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio}
}
@article {98,
	title = {Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures},
	journal = {physica status solidi (a)},
	volume = {217},
	year = {2020},
	month = {Jan-04-2020},
	pages = {1900687},
	issn = {1862-6300},
	doi = {10.1002/pssa.v217.710.1002/pssa.201900687},
	author = {Kabouche, Riad and Abid, Idriss and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Tajalli, Alaleh and Meneghini, Matteo and Meneghesso, Gaudenzio and Medjdoub, Farid}
}
@article {116,
	title = {Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment},
	journal = {Micromachines},
	volume = {11},
	year = {2020},
	month = {Jan-01-2020},
	pages = {101},
	doi = {10.3390/mi11010101},
	author = {Tajalli, Alaleh and Borga, Matteo and Meneghini, Matteo and De Santi, Carlo and Benazzi, Davide and Besend{\"o}rfer, Sven and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Kabouche, Riad and Abid, Idriss and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio}
}
@conference {113,
	title = {Degradation physics of GaN-based lateral and vertical devices},
	booktitle = {Gallium Nitride Materials and Devices XIVGallium Nitride Materials and Devices XIV},
	year = {2019},
	publisher = {SPIE},
	organization = {SPIE},
	address = {San Francisco, United States},
	doi = {10.1117/12.251114510.1117/12.2511145.6013192560001},
	author = {Meneghini, Matteo and De Santi, Carlo and Barbato, Alessandro and Borga, Matteo and Canato, Eleonora and Chiocchetta, Francesca and Fabris, Elena and Masin, Fabrizio and Nardo, Arianna and Rampazzo, Fabiana and Ruzzarin, Maria and Tajalli, Alaleh and Barbato, Marco and Meneghesso, Gaudenzio and Zanoni, Enrico},
	editor = {Morko{\c c}, Hadis and Fujioka, Hiroshi and Schwarz, Ulrich T.}
}
@conference {59,
	title = {Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron},
	booktitle = {Solid-State Device Research Conference (ESSDERC), 2017 47th European},
	year = {2017},
	publisher = {IEEE},
	organization = {IEEE},
	abstract = {Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the buffer. However, at higher temperatures, positive charge storage occurs as a result of band-to-band tunneling through the GaN channel layer, suppressing bulk trap induced dynamic on-resistance.},
	doi = {10.1109/ESSDERC.2017.8066609},
	author = {Stockman, Arno and Uren, Michael and Tajalli, Alaleh and Meneghini, Matteo and Bakeroot, Benoit and Moens, Peter}
}
