@conference {105,
	title = {A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability},
	booktitle = {2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS)},
	year = {2019},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Monterey, CA, USA},
	doi = {10.1109/IRPS.2019.8720521},
	author = {Moens, Peter and Stockman, Arno}
}
@article {86,
	title = {Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors},
	journal = {IEEE Transactions on Electron Devices},
	volume = {65},
	year = {2018},
	month = {Jan-12-2018},
	pages = {5365 - 5372},
	issn = {0018-9383},
	doi = {10.1109/TED.2018.2877262},
	url = {https://ieeexplore.ieee.org/document/8525132/http://xplorestaging.ieee.org/ielx7/16/8540961/08525132.pdf?arnumber=8525132},
	author = {Stockman, Arno and Masin, Fabrizio and Meneghini, Matteo and Zanoni, Enrico and Meneghesso, Gaudenzio and Bakeroot, Benoit and Moens, Peter}
}
@article {48,
	title = {Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs},
	journal = {IEEE Transactions on Electron Devices},
	volume = {PP},
	year = {2017},
	month = {08/2017},
	pages = {1-6},
	abstract = {This paper reports on the impact of soft- and hard-switching conditions on the dynamic ON-resistance of AlGaN/GaN high-electron mobility transistors. For this study, we used a special double pulse setup, which controls the overlapping of the drain and gate waveforms (thus inducing soft and hard switching), while measuring the corresponding impact on the ON-resistance, drain current, and electroluminescence (EL). The results demonstrate that the analyzed devices do not suffer from dynamic RON increase when they are submitted to soft switching up to VDS= 600 V. On the contrary, hard-switching conditions lead to a measurable increase in the dynamic ON-resistance (dynamic-RON). The increase in dynamic RON induced by hard switching is ascribed to hot-electrons effects: during each switching event, the electrons in the channel are accelerated by the high electric field and subsequently trapped in the AlGaN/GaN heterostructure or at the surface. This hypothesis is supported by the following results: 1) the increase in RON is correlated with the EL signal measured under hard-switching conditions and 2) the impact of hard switching on dynamic RON becomes weaker at high-temperature levels, as the average energy of hot electrons decreases due to the increase scattering with the lattice.},
	doi = {10.1109/TED.2017.2728785},
	url = {https://www.researchgate.net/publication/318872297_Evidence_of_Hot-Electron_Effects_during_Hard_Switching_of_AlGaNGaN_HEMTs},
	author = {Rossetto, I and Meneghini, M and Tajalli, A and Dalcanale, S and Santi, Carlo and Moens, Peter and Banerjee, Abhishek and Zanoni, Enrico and Meneghesso, Gaudenzio}
}
@conference {59,
	title = {Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron},
	booktitle = {Solid-State Device Research Conference (ESSDERC), 2017 47th European},
	year = {2017},
	publisher = {IEEE},
	organization = {IEEE},
	abstract = {Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the buffer. However, at higher temperatures, positive charge storage occurs as a result of band-to-band tunneling through the GaN channel layer, suppressing bulk trap induced dynamic on-resistance.},
	doi = {10.1109/ESSDERC.2017.8066609},
	author = {Stockman, Arno and Uren, Michael and Tajalli, Alaleh and Meneghini, Matteo and Bakeroot, Benoit and Moens, Peter}
}
