@article {123,
	title = {Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment},
	journal = {Microelectronics Reliability},
	volume = {100-101},
	year = {2019},
	month = {Jan-09-2019},
	pages = {113461},
	issn = {00262714},
	doi = {10.1016/j.microrel.2019.113461},
	author = {Borga, M. and Meneghini, M. and Benazzi, D. and Canato, E. and P{\"u}sche, R. and Derluyn, J. and Abid, I. and Medjdoub, F. and Meneghesso, G. and Zanoni, E.}
}
@conference {108,
	title = {GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current},
	booktitle = {43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019},
	year = {2019},
	address = {cabourg, France},
	url = {https://hal.archives-ouvertes.fr/hal-02356883},
	author = {Borga, M. and Meneghini, M. and Benazzi, D and P{\"u}sche, R and Derluyn, J and Abid, I and Medjdoub, F. and Meneghesso, G. and Zanoni, E.}
}
@conference {89,
	title = {Micro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate},
	booktitle = {2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS)},
	year = {2019},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Monterey, CA, USA},
	doi = {10.1109/IRPS.2019.8720549},
	url = {https://ieeexplore.ieee.org/document/8720549/http://xplorestaging.ieee.org/ielx7/8712125/8720395/08720549.pdf?arnumber=8720549},
	author = {Canato, E. and Masin, F. and Borga, M. and Zanoni, E. and Meneghini, M. and Meneghesso, G. and Stockman, A. and Banerjee, A. and Moens, P.}
}
