@article {97,
	title = {Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy},
	journal = {Japanese Journal of Applied Physics},
	volume = {58},
	year = {2019},
	month = {Jan-06-2019},
	pages = {SC1003},
	issn = {0021-4922},
	doi = {10.7567/1347-4065/ab0ad4},
	author = {Xiao, Shiyu and Jiang, Nan and Shojiki, Kanako and Uesugi, Kenjiro and Miyake, Hideto}
}
@article {99,
	title = {Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures},
	journal = {Japanese Journal of Applied Physics},
	volume = {58},
	year = {2019},
	month = {Jan-06-2019},
	pages = {SCCB30},
	issn = {0021-4922},
	doi = {10.7567/1347-4065/ab0d01},
	author = {Akiyma, Toru and Uchino, Motoshi and Nakamura, Kohji and Ito, Tomonori and Xiao, Shiyu and Miyake, Hideto}
}
@article {92,
	title = {Improvement mechanism of sputtered AlN films by high-temperature annealing},
	journal = {Journal of Crystal Growth},
	volume = {502},
	year = {2018},
	month = {Jan-11-2018},
	pages = {41 - 44},
	issn = {00220248},
	doi = {10.1016/j.jcrysgro.2018.09.002},
	author = {Xiao, Shiyu and Suzuki, Ryoya and Miyake, Hideto and Harada, Shunta and Ujihara, Toru}
}
