@article {101,
	title = {Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy},
	journal = {Japanese Journal of Applied Physics},
	volume = {58},
	year = {2019},
	month = {Jan-06-2019},
	pages = {SCCB17},
	issn = {0021-4922},
	doi = {10.7567/1347-4065/ab0d07},
	author = {Shojiki, Kanako and Hayashi, Yusuke and Uesugi, Kenjiro and Miyake, Hideto}
}
@article {97,
	title = {Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy},
	journal = {Japanese Journal of Applied Physics},
	volume = {58},
	year = {2019},
	month = {Jan-06-2019},
	pages = {SC1003},
	issn = {0021-4922},
	doi = {10.7567/1347-4065/ab0ad4},
	author = {Xiao, Shiyu and Jiang, Nan and Shojiki, Kanako and Uesugi, Kenjiro and Miyake, Hideto}
}
@article {95,
	title = {Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film},
	journal = {Journal of Crystal Growth},
	volume = {512},
	year = {2019},
	month = {Jan-04-2019},
	pages = {16 - 19},
	issn = {00220248},
	doi = {10.1016/j.jcrysgro.2019.02.001},
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}
@article {94,
	title = {Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures},
	journal = {Applied Physics Express},
	volume = {12},
	year = {2019},
	month = {Jan-06-2019},
	pages = {065501},
	issn = {1882-0778},
	doi = {10.7567/1882-0786/ab1ab8},
	author = {Uesugi, Kenjiro and Hayashi, Yusuke and Shojiki, Kanako and Miyake, Hideto}
}
@article {99,
	title = {Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures},
	journal = {Japanese Journal of Applied Physics},
	volume = {58},
	year = {2019},
	month = {Jan-06-2019},
	pages = {SCCB30},
	issn = {0021-4922},
	doi = {10.7567/1347-4065/ab0d01},
	author = {Akiyma, Toru and Uchino, Motoshi and Nakamura, Kohji and Ito, Tomonori and Xiao, Shiyu and Miyake, Hideto}
}
@article {93,
	title = {Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy},
	journal = {Japanese Journal of Applied Physics},
	volume = {57},
	year = {2018},
	month = {Jan-01-2018},
	pages = {01AD05},
	issn = {0021-4922},
	doi = {10.7567/JJAP.57.01AD05},
	author = {Yoshizawa, Ryo and Miyake, Hideto and Hiramatsu, Kazumasa}
}
@article {92,
	title = {Improvement mechanism of sputtered AlN films by high-temperature annealing},
	journal = {Journal of Crystal Growth},
	volume = {502},
	year = {2018},
	month = {Jan-11-2018},
	pages = {41 - 44},
	issn = {00220248},
	doi = {10.1016/j.jcrysgro.2018.09.002},
	author = {Xiao, Shiyu and Suzuki, Ryoya and Miyake, Hideto and Harada, Shunta and Ujihara, Toru}
}
@article {96,
	title = {Polarity inversion of aluminum nitride by direct wafer bonding},
	journal = {Applied Physics Express},
	volume = {11},
	year = {2018},
	month = {Jan-03-2018},
	pages = {031003},
	issn = {1882-0778},
	doi = {10.7567/APEX.11.031003},
	author = {Hayashi, Yusuke and Katayama, Ryuji and Akiyama, Toru and Ito, Tomonori and Miyake, Hideto}
}
