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	title = {High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications},
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	pages = {4271},
	doi = {10.3390/ma13194271},
	author = {Tajalli, Alaleh and Meneghini, Matteo and Besend{\"o}rfer, Sven and Kabouche, Riad and Abid, Idriss and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio}
}
@article {126,
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	doi = {10.1038/s41598-020-73977-2},
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	author = {Besend{\"o}rfer, Sven and Meissner, Elke and Medjdoub, Farid and Derluyn, Joff and Friedrich, Jochen and Erlbacher, Tobias}
}
@article {98,
	title = {Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures},
	journal = {physica status solidi (a)},
	volume = {217},
	year = {2020},
	month = {Jan-04-2020},
	pages = {1900687},
	issn = {1862-6300},
	doi = {10.1002/pssa.v217.710.1002/pssa.201900687},
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}
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	title = {Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment},
	journal = {Micromachines},
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	pages = {101},
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}
