@conference {102,
	title = {Advanced Gate Drive Unit for junction temperature monitoring and dynamic current balancing of GaN transistors operating in parallel},
	booktitle = {2020 IEEE Applied Power Electronics Conference and Exposition (APEC)2020 IEEE Applied Power Electronics Conference and Exposition (APEC)},
	year = {2020},
	publisher = {IEEE},
	organization = {IEEE},
	address = {New Orleans, LA, USA},
	doi = {10.1109/APEC39645.202010.1109/APEC39645.2020.9124529},
	author = {Melkonyan, Ashot and Schulz, Martin}
}
@article {110,
	title = {Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE},
	journal = {Applied Physics Express},
	volume = {13},
	year = {2020},
	month = {Jan-05-2020},
	pages = {055507},
	issn = {1882-0778},
	doi = {10.35848/1882-0786/ab8723},
	author = {Shintaku, Fumiya and Yosho, Daichi and Kangawa, Yoshihiro and Iwata, Jun-Ichi and Oshiyama, Atsushi and Shiraishi, Kenji and Tanaka, Atsushi and Amano, Hiroshi}
}
@article {121,
	title = {Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based heterostructures},
	journal = {Journal of Applied Physics},
	volume = {127},
	year = {2020},
	month = {Jul-06-2020},
	pages = {215701},
	issn = {0021-8979},
	doi = {10.1063/5.0006003},
	author = {Geenen, F. and Constant, A. and Solano, E. and Deduytsche, D. and Mocuta, C. and Coppens, P. and Detavernier, C.}
}
@conference {124,
	title = {Half-bridge Concepts for High Blocking Voltage GaN HEMTs (EU Public Funded Project {\textquoteleft}InRel-NPower {\textquoteleft}},
	booktitle = {CIPS 2020; 11th International Conference on Integrated Power Electronics Systems},
	year = {2020},
	publisher = {VDE},
	organization = {VDE},
	author = {Rittner, Martin and Kessler, Ulrich and Konjedic, Tine and Naundorf, Joerg and Kriegel, Kai and Schulz, Martin and Meneghesso, Gaudenzio}
}
@article {111,
	title = {High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications},
	journal = {Materials},
	volume = {13},
	year = {2020},
	month = {Jan-10-2020},
	pages = {4271},
	doi = {10.3390/ma13194271},
	author = {Tajalli, Alaleh and Meneghini, Matteo and Besend{\"o}rfer, Sven and Kabouche, Riad and Abid, Idriss and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio}
}
@article {126,
	title = {The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors},
	journal = {Scientific Reports},
	volume = {10},
	year = {2020},
	month = {Jan-12-2020},
	doi = {10.1038/s41598-020-73977-2},
	url = {http://www.nature.com/articles/s41598-020-73977-2},
	author = {Besend{\"o}rfer, Sven and Meissner, Elke and Medjdoub, Farid and Derluyn, Joff and Friedrich, Jochen and Erlbacher, Tobias}
}
@article {118,
	title = {Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures},
	journal = {AIP Advances},
	volume = {10},
	year = {2020},
	month = {Jan-04-2020},
	pages = {045028},
	doi = {10.1063/1.5141905},
	author = {Besend{\"o}rfer, S. and Meissner, E. and Zweipfennig, T. and Yacoub, H. and Fahle, D. and Behmenburg, H. and Kalisch, H. and Vescan, A. and Friedrich, J. and Erlbacher, T.}
}
@article {98,
	title = {Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures},
	journal = {physica status solidi (a)},
	volume = {217},
	year = {2020},
	month = {Jan-04-2020},
	pages = {1900687},
	issn = {1862-6300},
	doi = {10.1002/pssa.v217.710.1002/pssa.201900687},
	author = {Kabouche, Riad and Abid, Idriss and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Tajalli, Alaleh and Meneghini, Matteo and Meneghesso, Gaudenzio and Medjdoub, Farid}
}
@article {107,
	title = {Modeling carbon coverage on polar GaN surfaces during MOVPE},
	journal = {Japanese Journal of Applied Physics},
	volume = {59},
	year = {2020},
	month = {Jan-04-2020},
	pages = {048002},
	issn = {0021-4922},
	doi = {10.35848/1347-4065/ab80e2},
	author = {Yosho, Daichi and Inatomi, Yuya and Kangawa, Yoshihiro}
}
@article {104,
	title = {Oxygen Incorporation Kinetics in Vicinal <i>m</i>               (10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy},
	journal = {physica status solidi (RRL) {\textendash} Rapid Research Letters},
	volume = {14},
	year = {2020},
	month = {Jan-06-2020},
	pages = {2000142},
	issn = {1862-6254},
	doi = {10.1002/pssr.v14.610.1002/pssr.202000142},
	author = {Yosho, Daichi and Shintaku, Fumiya and Inatomi, Yuya and Kangawa, Yoshihiro and Iwata, Jun-Ichi and Oshiyama, Atsushi and Shiraishi, Kenji and Tanaka, Atsushi and Amano, Hiroshi}
}
@conference {103,
	title = {Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure},
	booktitle = {2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
	year = {2020},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Vienna, Austria},
	doi = {10.1109/ISPSD46842.202010.1109/ISPSD46842.2020.9170170},
	author = {Abid, I. and Kabouche, R. and Medjdoub, F. and Besend{\"o}rfer, S. and Meissner, E. and Derluyn, J. and Degroote, S. and Germain, M. and Miyake, H.}
}
@article {112,
	title = {Theoretical study of adatom stability on polar GaN surfaces during MBE and MOVPE},
	journal = {Applied Surface Science},
	volume = {502},
	year = {2020},
	month = {Jan-02-2020},
	pages = {144205},
	issn = {01694332},
	doi = {10.1016/j.apsusc.2019.144205},
	author = {Inatomi, Y. and Kangawa, Y.}
}
@booklet {120,
	title = {Vertical Breakdown of GaN on Si Due to V-Pits},
	year = {2020},
	author = {Freitas, Jaime Jr A and Besendorfer, S and Meissner, E and Tajalli, A and Meneghini, M and Derluyn, J and Medjdoub, F and Meneghesso, G and Friedrich, J and Erlbacher, T}
}
@article {117,
	title = {Vertical breakdown of GaN on Si due to V-pits},
	journal = {Journal of Applied Physics},
	volume = {127},
	year = {2020},
	month = {Jul-01-2020},
	pages = {015701},
	issn = {0021-8979},
	doi = {10.1063/1.5129248},
	author = {Besend{\"o}rfer, S. and Meissner, E. and Tajalli, A. and Meneghini, M. and Freitas, J. A. and Derluyn, J. and Medjdoub, F. and Meneghesso, G. and Friedrich, J. and Erlbacher, T.}
}
@article {116,
	title = {Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment},
	journal = {Micromachines},
	volume = {11},
	year = {2020},
	month = {Jan-01-2020},
	pages = {101},
	doi = {10.3390/mi11010101},
	author = {Tajalli, Alaleh and Borga, Matteo and Meneghini, Matteo and De Santi, Carlo and Benazzi, Davide and Besend{\"o}rfer, Sven and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Kabouche, Riad and Abid, Idriss and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio}
}
@article {123,
	title = {Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment},
	journal = {Microelectronics Reliability},
	volume = {100-101},
	year = {2019},
	month = {Jan-09-2019},
	pages = {113461},
	issn = {00262714},
	doi = {10.1016/j.microrel.2019.113461},
	author = {Borga, M. and Meneghini, M. and Benazzi, D. and Canato, E. and P{\"u}sche, R. and Derluyn, J. and Abid, I. and Medjdoub, F. and Meneghesso, G. and Zanoni, E.}
}
@article {87,
	title = {CH4 Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films},
	journal = {Materials},
	volume = {12},
	year = {2019},
	month = {Jan-03-2019},
	pages = {972},
	doi = {10.3390/ma12060972},
	url = {https://www.mdpi.com/1996-1944/12/6/972https://www.mdpi.com/1996-1944/12/6/972/pdf},
	author = {Kusaba, Akira and Li, Guanchen and Kempisty, Pawel and von Spakovsky, Michael and Kangawa, Yoshihiro}
}
@conference {113,
	title = {Degradation physics of GaN-based lateral and vertical devices},
	booktitle = {Gallium Nitride Materials and Devices XIVGallium Nitride Materials and Devices XIV},
	year = {2019},
	publisher = {SPIE},
	organization = {SPIE},
	address = {San Francisco, United States},
	doi = {10.1117/12.251114510.1117/12.2511145.6013192560001},
	author = {Meneghini, Matteo and De Santi, Carlo and Barbato, Alessandro and Borga, Matteo and Canato, Eleonora and Chiocchetta, Francesca and Fabris, Elena and Masin, Fabrizio and Nardo, Arianna and Rampazzo, Fabiana and Ruzzarin, Maria and Tajalli, Alaleh and Barbato, Marco and Meneghesso, Gaudenzio and Zanoni, Enrico},
	editor = {Morko{\c c}, Hadis and Fujioka, Hiroshi and Schwarz, Ulrich T.}
}
@conference {115,
	title = {Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects},
	booktitle = {International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019},
	year = {2019},
	address = {Minneapolis, United States},
	keywords = {GaN power devices, high voltage, trapping},
	url = {https://hal.archives-ouvertes.fr/hal-02356891},
	author = {Kabouche, R and Abid, I and Zegaoui, M. and Cheng, K and Medjdoub, F.}
}
@article {85,
	title = {The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors},
	journal = {IEEE Transactions on Electron Devices},
	volume = {66},
	year = {2019},
	month = {Jan-01-2019},
	pages = {372 - 377},
	issn = {0018-9383},
	doi = {10.1109/TED.2018.2881325},
	url = {https://ieeexplore.ieee.org/document/8556004/http://xplorestaging.ieee.org/ielx7/16/8585319/08556004.pdf?arnumber=8556004},
	author = {Stockman, A. and Tajalli, A. and Meneghini, M. and Uren, M. J. and Mouhoubi, S. and Gerardin, S. and Bagatin, M. and Paccagnella, A. and Meneghesso, G. and Zanoni, E. and Moens, P. and Bakeroot, B.}
}
@article {106,
	title = {The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs},
	journal = {IEEE Electron Device Letters},
	volume = {40},
	year = {2019},
	month = {Jan-07-2019},
	pages = {1060 - 1063},
	issn = {0741-3106},
	doi = {10.1109/LED.5510.1109/LED.2019.2915984},
	author = {Pavlidis, Georges and Kim, Samuel H. and Abid, Idriss and Zegaoui, Malek and Medjdoub, Farid and Graham, Samuel}
}
@article {109,
	title = {ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping},
	journal = {Microelectronics Reliability},
	volume = {100-101},
	year = {2019},
	month = {Jan-09-2019},
	pages = {113334},
	issn = {00262714},
	doi = {10.1016/j.microrel.2019.06.026},
	author = {Canato, E. and Meneghini, M. and Nardo, A. and Masin, F. and Barbato, A. and Barbato, M. and Stockman, A. and Banerjee, A. and Moens, P. and Zanoni, E. and Meneghesso, G.}
}
@conference {114,
	title = {GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability},
	booktitle = {2019 Electron Devices Technology and Manufacturing Conference (EDTM)2019 Electron Devices Technology and Manufacturing Conference (EDTM)},
	year = {2019},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Singapore, Singapore},
	doi = {10.1109/EDTM.2019.8731064},
	author = {Meneghesso, Gaudenzio and Meneghini, Matteo and De Santi, Carlo and Zanoni, Enrico}
}
@conference {108,
	title = {GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current},
	booktitle = {43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019},
	year = {2019},
	address = {cabourg, France},
	url = {https://hal.archives-ouvertes.fr/hal-02356883},
	author = {Borga, M. and Meneghini, M. and Benazzi, D and P{\"u}sche, R and Derluyn, J and Abid, I and Medjdoub, F. and Meneghesso, G. and Zanoni, E.}
}
@article {101,
	title = {Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy},
	journal = {Japanese Journal of Applied Physics},
	volume = {58},
	year = {2019},
	month = {Jan-06-2019},
	pages = {SCCB17},
	issn = {0021-4922},
	doi = {10.7567/1347-4065/ab0d07},
	author = {Shojiki, Kanako and Hayashi, Yusuke and Uesugi, Kenjiro and Miyake, Hideto}
}
@article {71,
	title = {Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices},
	journal = {Journal of Applied Physics},
	volume = {125},
	year = {2019},
	month = {Jul-03-2019},
	pages = {095704},
	abstract = {<p>In this work, an AlGaN/GaN-HEMT heterostructure is exemplarily studied by a strict place-to-place correlational approach in order to help clarify some open questions in the wide field of reliability topics. Especially, vertical leakage current, its relation to dislocations in general, and specific types in particular are investigated on a highly defective material. With the aid of atomic force microscopy (AFM) in tapping mode, cathodoluminescence imaging, defect selective etching, and energy dispersive X-ray, the material{\textquoteright}s defect content around the device relevant two dimensional electron gas is analyzed. The total dislocation density, as well as the density of threading screw, edge, and mixed type dislocations, is systematically investigated directly. The obtained result is statistically much more significant than is possible by conventional transmission electron microscopy studies and more precise than the results obtained by the indirect method of rocking curve analysis. The method of conductive AFM allowed mapping of variations in the vertical leakage current, which could be correlated with variations in barrier leakage or gate leakage. Spots of locally high leakage current could be observed and directly assigned to dislocations with a screw component, but with significant differences even within the same group of dislocation types. The electrical activity of dislocations is discussed in general, and a fundamental model for a potential dislocation driven vertical leakage is proposed.</p>},
	issn = {0021-8979},
	doi = {10.1063/1.5065442},
	url = {http://aip.scitation.org/doi/10.1063/1.5065442http://aip.scitation.org/doi/pdf/10.1063/1.5065442},
	author = {Besend{\"o}rfer, S. and Meissner, E. and Lesnik, A. and Friedrich, J. and Dadgar, A. and Erlbacher, T.}
}
@conference {89,
	title = {Micro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate},
	booktitle = {2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS)},
	year = {2019},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Monterey, CA, USA},
	doi = {10.1109/IRPS.2019.8720549},
	url = {https://ieeexplore.ieee.org/document/8720549/http://xplorestaging.ieee.org/ielx7/8712125/8720395/08720549.pdf?arnumber=8720549},
	author = {Canato, E. and Masin, F. and Borga, M. and Zanoni, E. and Meneghini, M. and Meneghesso, G. and Stockman, A. and Banerjee, A. and Moens, P.}
}
@conference {105,
	title = {A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability},
	booktitle = {2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS)},
	year = {2019},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Monterey, CA, USA},
	doi = {10.1109/IRPS.2019.8720521},
	author = {Moens, Peter and Stockman, Arno}
}
@article {127,
	title = {Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress},
	journal = {Applied Physics Letters},
	volume = {115},
	year = {2019},
	month = {May-07-2021},
	pages = {052103},
	issn = {0003-6951},
	doi = {10.1063/1.5109301},
	url = {http://aip.scitation.org/doi/10.1063/1.5109301},
	author = {Masin, F. and Meneghini, M. and Canato, E. and De Santi, C. and Stockman, A. and Zanoni, E. and Moens, P. and Meneghesso, G.}
}
@article {97,
	title = {Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy},
	journal = {Japanese Journal of Applied Physics},
	volume = {58},
	year = {2019},
	month = {Jan-06-2019},
	pages = {SC1003},
	issn = {0021-4922},
	doi = {10.7567/1347-4065/ab0ad4},
	author = {Xiao, Shiyu and Jiang, Nan and Shojiki, Kanako and Uesugi, Kenjiro and Miyake, Hideto}
}
@article {95,
	title = {Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film},
	journal = {Journal of Crystal Growth},
	volume = {512},
	year = {2019},
	month = {Jan-04-2019},
	pages = {16 - 19},
	issn = {00220248},
	doi = {10.1016/j.jcrysgro.2019.02.001},
	author = {Tanaka, Shuichi and Shojiki, Kanako and Uesugi, Kenjiro and Hayashi, Yusuke and Miyake, Hideto}
}
@article {94,
	title = {Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures},
	journal = {Applied Physics Express},
	volume = {12},
	year = {2019},
	month = {Jan-06-2019},
	pages = {065501},
	issn = {1882-0778},
	doi = {10.7567/1882-0786/ab1ab8},
	author = {Uesugi, Kenjiro and Hayashi, Yusuke and Shojiki, Kanako and Miyake, Hideto}
}
@article {99,
	title = {Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures},
	journal = {Japanese Journal of Applied Physics},
	volume = {58},
	year = {2019},
	month = {Jan-06-2019},
	pages = {SCCB30},
	issn = {0021-4922},
	doi = {10.7567/1347-4065/ab0d01},
	author = {Akiyma, Toru and Uchino, Motoshi and Nakamura, Kohji and Ito, Tomonori and Xiao, Shiyu and Miyake, Hideto}
}
@article {119,
	title = {The 2018 GaN power electronics roadmap},
	journal = {Journal of Physics D: Applied Physics},
	volume = {51},
	year = {2018},
	month = {Jan-04-2020},
	pages = {163001},
	issn = {0022-3727},
	doi = {10.1088/1361-6463/aaaf9d},
	author = {Amano, H and Baines, Y and Beam, E and Borga, Matteo and Bouchet, T and Chalker, Paul R and Charles, M and Chen, Kevin J and Chowdhury, Nadim and Chu, Rongming and De Santi, Carlo and De Souza, Maria Merlyne and Decoutere, Stefaan and Di Cioccio, L and Eckardt, Bernd and Egawa, Takashi and Fay, P and Freedsman, Joseph J and Guido, L and H{\"a}berlen, Oliver and Haynes, Geoff and Heckel, Thomas and Hemakumara, Dilini and Houston, Peter and Hu, Jie and Hua, Mengyuan and Huang, Qingyun and Huang, Alex and Jiang, Sheng and Kawai, H and Kinzer, Dan and Kuball, Martin and Kumar, Ashwani and Lee, Kean Boon and Li, Xu and Marcon, Denis and M{\"a}rz, Martin and McCarthy, R and Meneghesso, Gaudenzio and Meneghini, Matteo and Morvan, E and Nakajima, A and Narayanan, E M S and Oliver, Stephen and Palacios, Tom{\'a}s and Piedra, Daniel and Plissonnier, M and Reddy, R and Sun, Min and Thayne, Iain and Torres, A and Trivellin, Nicola and Unni, V and Uren, Michael J and Van Hove, Marleen and Wallis, David J and Wang, J and Xie, J and Yagi, S and Yang, Shu and Youtsey, C and Yu, Ruiyang and Zanoni, Enrico and Zeltner, Stefan and Zhang, Yuhao}
}
@conference {88,
	title = {Dynamic-ron control via proton irradiation in AlGaN/GaN transistors},
	booktitle = {2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
	year = {2018},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Chicago, IL},
	doi = {10.1109/ISPSD.2018.8393610},
	url = {https://ieeexplore.ieee.org/document/8393610/http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393610.pdf?arnumber=8393610},
	author = {Tajalli, A. and Stockman, A. and Meneghini, M. and Mouhoubi, S. and Banerjee, A. and Gerardin, S. and Bagatin, M. and Paccagnella, A. and Zanoni, E. and Tack, M. and Bakeroot, B. and Moens, P. and Meneghesso, G.}
}
@article {93,
	title = {Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy},
	journal = {Japanese Journal of Applied Physics},
	volume = {57},
	year = {2018},
	month = {Jan-01-2018},
	pages = {01AD05},
	issn = {0021-4922},
	doi = {10.7567/JJAP.57.01AD05},
	author = {Yoshizawa, Ryo and Miyake, Hideto and Hiramatsu, Kazumasa}
}
@article {58,
	title = {GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap},
	journal = {Applied Physics Express},
	volume = {11},
	year = {2018},
	pages = {034102},
	abstract = {We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal{\textendash}insulator{\textendash}semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 {\textmu}A/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-{\textmu}m-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩcenterdotcm2.},
	doi = {10.7567/APEX.11.034102},
	url = {http://iopscience.iop.org/article/10.7567/APEX.11.034102/pdf},
	author = {Dogmus, Ezgi and Zegaoui, Malek and Medjdoub, Farid}
}
@article {86,
	title = {Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors},
	journal = {IEEE Transactions on Electron Devices},
	volume = {65},
	year = {2018},
	month = {Jan-12-2018},
	pages = {5365 - 5372},
	issn = {0018-9383},
	doi = {10.1109/TED.2018.2877262},
	url = {https://ieeexplore.ieee.org/document/8525132/http://xplorestaging.ieee.org/ielx7/16/8540961/08525132.pdf?arnumber=8525132},
	author = {Stockman, Arno and Masin, Fabrizio and Meneghini, Matteo and Zanoni, Enrico and Meneghesso, Gaudenzio and Bakeroot, Benoit and Moens, Peter}
}
@article {84,
	title = {Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors},
	journal = {Microelectronics Reliability},
	volume = {88-90},
	year = {2018},
	month = {Jan-09-2018},
	pages = {572 - 576},
	issn = {00262714},
	doi = {10.1016/j.microrel.2018.06.037},
	url = {https://linkinghub.elsevier.com/retrieve/pii/S0026271418304530https://api.elsevier.com/content/article/PII:S0026271418304530?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0026271418304530?httpAccept=text/plain},
	author = {Tajalli, A. and Canato, E. and Nardo, A. and Meneghini, M. and Stockman, A. and Moens, P. and Zanoni, E. and Meneghesso, G.}
}
@article {92,
	title = {Improvement mechanism of sputtered AlN films by high-temperature annealing},
	journal = {Journal of Crystal Growth},
	volume = {502},
	year = {2018},
	month = {Jan-11-2018},
	pages = {41 - 44},
	issn = {00220248},
	doi = {10.1016/j.jcrysgro.2018.09.002},
	author = {Xiao, Shiyu and Suzuki, Ryoya and Miyake, Hideto and Harada, Shunta and Ujihara, Toru}
}
@conference {122,
	title = {Innovative Reliable Nitride based Power Devices and Applications-The EU Public Funded Project{\textquoteright}InRel-NPower{\textquoteright}},
	booktitle = {CIPS 2018; 10th International Conference on Integrated Power Electronics Systems},
	year = {2018},
	publisher = {VDE},
	organization = {VDE},
	author = {Rittner, Martin and Kessler, Ulrich and Naundorf, Joerg and Kriegel, Kai and Schulz, Martin and Meneghesso, Gaudenzio}
}
@conference {61,
	title = {On the origin of the leakage current in p-gate AlGaN/GaN HEMTs},
	booktitle = {2018 IEEE International Reliability Physics Symposium (IRPS)},
	year = {2018},
	month = {March},
	abstract = {Temperature dependent DC and double pulse measurements are performed on p-GaN gated AlGaN/GaN enhancement mode power transistors. Devices with improved Schottky metal/p-GaN interface quality and p-GaN sidewall passivation are studied. It is shown that both processes reduce the reverse and forward gate leakage current significantly. This is related to the improved p-GaN sidewall roughness and density of interface states, all contributing to sidewall leakage. Under double pulsed testing, an untreated device shows a negative threshold voltage shift at high forward gate voltage, which is explained by hole trapping in the barrier. Improving the p-GaN sidewall quality reduces the supply of holes towards the p-GaN/AlGaN interface, and a positive threshold voltage shift is observed. This can be explained by electron injection from the channel into the barrier.},
	keywords = {AlGaN-GaN, aluminium compounds, Aluminum gallium nitride, charge injection, double pulse measurement, double pulse measurements, double pulsed testing, electron injection, electron traps, enhancement mode power transistor, gallium compounds, GaN, gate leakage current, HEMT, HEMTs, high electron mobility transistors, high-electron-mobility transistor, hole trap, hole traps, III-V semiconductors, interface quality, interface states, leakage current, leakage currents, Logic gates, MODFETs, ositive threshold voltage shift, p-GaN gate, passivation, power transistors, Schottky barriers, Schottky metal-semiconductor interface quality, semiconductor device breakdown, semiconductor-metal boundaries, sidewall leakage, sidewall passivation, sidewall roughness, temperature dependent DC neasurement, Temperature measurement, wide band gap semiconductors},
	doi = {10.1109/IRPS.2018.8353582},
	author = {A. Stockman and E. Canato and A. Tajalli and M. Meneghini and G. Meneghesso and E. Zanoni and P. Moens and B. Bakeroot}
}
@article {96,
	title = {Polarity inversion of aluminum nitride by direct wafer bonding},
	journal = {Applied Physics Express},
	volume = {11},
	year = {2018},
	month = {Jan-03-2018},
	pages = {031003},
	issn = {1882-0778},
	doi = {10.7567/APEX.11.031003},
	author = {Hayashi, Yusuke and Katayama, Ryuji and Akiyama, Toru and Ito, Tomonori and Miyake, Hideto}
}
@article {51,
	title = {Trapping phenomena and degradation mechanisms in GaN-based power HEMTs},
	journal = {Materials Science in Semiconductor Processing},
	volume = {78},
	year = {2018},
	month = {05/2018},
	pages = {118 - 126},
	abstract = {This paper reports an overview of the most relevant trapping and degradation mechanisms that limit the performance and lifetime of GaN-based transistors for application in power electronics. Results obtained on state-of-the-art devices are described and discussed throughout the paper, with the aim of providing a clear description of the topic. The first part of the paper deals with the issue of dynamic-Ron: after describing a robust test strategy for the analysis of the pulsed characteristics of the devices, we discuss the voltage- and temperature-dependent pulsed I-V characteristics of 650V-rated transistors, and the physical origin of dynamic Ron in these devices. The results demonstrate that through proper buffer optimization it is possible to reach negligible trapping at high voltage. The properties of the traps responsible for dynamic-Ron are also discussed in detail in the paper, based on drain-current transient data. A specific discussion is devoted to hot-electron trapping processes, that {\textendash} under hard switching conditions {\textendash} may lead to significant modifications in the resistance of the 2DEG. The second part of the paper deals with device degradation: based on a wide set of experimental results, we describe the physical mechanisms responsible for the worsening of the properties of the devices. More specifically, we demonstrate that stress in off-state conditions may result in measurable changes in the pinch-off voltage, mostly consisting in a negative-threshold instability (NBTI). The origin of this shift is discussed in detail; we also demonstrate that in a real-life cascode configuration (where a low, subthreshold leakage current flows through the device in the off-state), NBTI effects are mitigated. Finally, we discuss the stability of the gate-stack, induced by the exposure to positive gate bias.},
	issn = {1369-8001},
	doi = {https://doi.org/10.1016/j.mssp.2017.10.009},
	url = {http://www.sciencedirect.com/science/article/pii/S1369800117321716},
	author = {Matteo Meneghini and Alaleh Tajalli and Peter Moens and Abhishek Banerjee and Enrico Zanoni and Gaudenzio Meneghesso}
}
@article {50,
	title = {DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1{\textasciimacron}) metalorganic vapor phase epitaxy},
	journal = {Applied Physics Letters},
	volume = {111},
	year = {2017},
	month = {10/2017},
	type = {Journal Article},
	chapter = {141602},
	abstract = {The carbon incorporation mechanism in GaN(0001) and GaN(000-1) during MOVPE was investigated using density functional theory (DFT) calculations. The results confirm that the crucial factors for carbon incorporation are Fermi level pinning and accompanying surface band bending. In addition, the lattice symmetry has a strong dependence on the stability of carbon in a few subsurface layers, which results from interactions between the impurities and surface states. It was shown that these effects are responsible for facilitating or hindering the incorporation of impurities and dopants. The influence of diluent gas species (hydrogen or nitrogen) on carbon incorporation was discussed.},
	doi = {10.1063/1.4991608},
	url = {https://doi.org/10.1063/1.4991608},
	author = {Pawel Kempisty and Yoshihiro Kangawa and Akira Kusaba and Kenji Shiraishi and Stanislaw Krukowski and Michal Bockowski and Koichi Kakimoto and Hiroshi Amano}
}
@article {48,
	title = {Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs},
	journal = {IEEE Transactions on Electron Devices},
	volume = {PP},
	year = {2017},
	month = {08/2017},
	pages = {1-6},
	abstract = {This paper reports on the impact of soft- and hard-switching conditions on the dynamic ON-resistance of AlGaN/GaN high-electron mobility transistors. For this study, we used a special double pulse setup, which controls the overlapping of the drain and gate waveforms (thus inducing soft and hard switching), while measuring the corresponding impact on the ON-resistance, drain current, and electroluminescence (EL). The results demonstrate that the analyzed devices do not suffer from dynamic RON increase when they are submitted to soft switching up to VDS= 600 V. On the contrary, hard-switching conditions lead to a measurable increase in the dynamic ON-resistance (dynamic-RON). The increase in dynamic RON induced by hard switching is ascribed to hot-electrons effects: during each switching event, the electrons in the channel are accelerated by the high electric field and subsequently trapped in the AlGaN/GaN heterostructure or at the surface. This hypothesis is supported by the following results: 1) the increase in RON is correlated with the EL signal measured under hard-switching conditions and 2) the impact of hard switching on dynamic RON becomes weaker at high-temperature levels, as the average energy of hot electrons decreases due to the increase scattering with the lattice.},
	doi = {10.1109/TED.2017.2728785},
	url = {https://www.researchgate.net/publication/318872297_Evidence_of_Hot-Electron_Effects_during_Hard_Switching_of_AlGaNGaN_HEMTs},
	author = {Rossetto, I and Meneghini, M and Tajalli, A and Dalcanale, S and Santi, Carlo and Moens, Peter and Banerjee, Abhishek and Zanoni, Enrico and Meneghesso, Gaudenzio}
}
@article {83,
	title = {Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs},
	journal = {IEEE Transactions on Electron Devices},
	volume = {64},
	year = {2017},
	month = {Jan-09-2017},
	pages = {3734 - 3739},
	issn = {0018-9383},
	doi = {10.1109/TED.2017.2728785},
	url = {http://ieeexplore.ieee.org/document/8000404/http://xplorestaging.ieee.org/ielx7/16/8011577/08000404.pdf?arnumber=8000404},
	author = {Rossetto, I. and Meneghini, M. and Tajalli, A. and Dalcanale, S. and De Santi, C. and Moens, P. and Banerjee, A. and Zanoni, E. and Meneghesso, G.}
}
@article {49,
	title = {Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics},
	journal = {Materials},
	volume = {10},
	year = {2017},
	month = {8/2017},
	type = {Journal Article},
	abstract = {Clearly understanding elementary growth processes that depend on surface reconstruction is essential to controlling vapor-phase epitaxy more precisely. In this study, ammonia chemical adsorption on GaN(0001) reconstructed surfaces under metalorganic vapor phase epitaxy (MOVPE) conditions (3Ga-H and Nad-H + Ga-H on a 2 {\texttimes} 2 unit cell) is investigated using steepest-entropy-ascent quantum thermodynamics (SEAQT). SEAQT is a thermodynamic-ensemble based, first-principles framework that can predict the behavior of non-equilibrium processes, even those far from equilibrium where the state evolution is a combination of reversible and irreversible dynamics. SEAQT is an ideal choice to handle this problem on a first-principles basis since the chemical adsorption process starts from a highly non-equilibrium state. A result of the analysis shows that the probability of adsorption on 3Ga-H is significantly higher than that on Nad-H + Ga-H. Additionally, the growth temperature dependence of these adsorption probabilities and the temperature increase due to the heat of reaction is determined. The non-equilibrium thermodynamic modeling applied can lead to better control of the MOVPE process through the selection of preferable reconstructed surfaces. The modeling also demonstrates the efficacy of DFT-SEAQT coupling for determining detailed non-equilibrium process characteristics with a much smaller computational burden than would be entailed with mechanics-based, microscopic-mesoscopic approaches.},
	issn = {1996-1944},
	doi = {10.3390/ma10080948},
	url = {http://www.mdpi.com/1996-1944/10/8/948},
	author = {Kusaba, Akira and Li, Guanchen and von Spakovsky, Michael R. and Kangawa, Yoshihiro and Kakimoto, Koichi}
}
@conference {59,
	title = {Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron},
	booktitle = {Solid-State Device Research Conference (ESSDERC), 2017 47th European},
	year = {2017},
	publisher = {IEEE},
	organization = {IEEE},
	abstract = {Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the buffer. However, at higher temperatures, positive charge storage occurs as a result of band-to-band tunneling through the GaN channel layer, suppressing bulk trap induced dynamic on-resistance.},
	doi = {10.1109/ESSDERC.2017.8066609},
	author = {Stockman, Arno and Uren, Michael and Tajalli, Alaleh and Meneghini, Matteo and Bakeroot, Benoit and Moens, Peter}
}
@article {100,
	title = {Thermodynamic analysis of (0001) and $(000\bar{1})$ GaN metalorganic vapor phase epitaxy},
	journal = {Japanese Journal of Applied Physics},
	volume = {56},
	year = {2017},
	month = {Jan-07-2017},
	pages = {070304},
	issn = {0021-4922},
	doi = {10.7567/JJAP.56.070304},
	author = {Kusaba, Akira and Kangawa, Yoshihiro and Kempisty, Pawel and Valencia, Hubert and Shiraishi, Kenji and Kumagai, Yoshinao and Kakimoto, Koichi and Koukitu, Akinori}
}
@conference {60,
	title = {Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation},
	booktitle = {2017 IEEE International Electron Devices Meeting (IEDM)},
	year = {2017},
	month = {Dec},
	abstract = {For the first time, we demonstrate that proton irradiation can be an effective tool for achieving zero dynamic-Ron in GaN-based power HEMTs. Based on combined pulsed characterization, transient measurements and hard switching analysis on untreated and irradiated devices we demonstrate the following relevant results: (i) the devices under analysis show an outstanding robustness against 3 MeV proton irradiation, up to a fluence of 1.5{\texttimes}1014cm-2. (ii) For fluences higher than 1013cm-2, the devices show a substantial reduction of dynamic-Ron. At the highest analyzed fluence (1.5{\texttimes}1014cm-2), dynamic-Ron is completely suppressed at 600 V/150 {\textdegree}C, without measurable changes in the gate and sub-threshold leakage and in the threshold voltage. (iii) transient and hard switching analysis indicate the total suppression of the trap-related transients identified before radiation testing. The results are explained by considering that proton irradiation increases the leakage through the uid-GaN channel layer. This increases the detrapping rate, and leads to the suppression of dynamic-Ron at high VDS.},
	keywords = {AlGaN-GaN, aluminium compounds, Current measurement, dynamic-Ron, electron traps, electron volt energy 3.0 MeV, gallium compounds, Gallium nitride, hard switching analysis, HEMT, HEMTs, high electron mobility transistors, III-V semiconductors, MODFETs, power HEMT, proton effects, proton irradiation, Protons, pulsed characterization, Radiation effects, radiation hardening (electronics), radiation testing, semiconductor device testing, subthreshold leakage, Switches, temperature 150.0 degC, threshold voltage, transient measurements, trap-related transients, voltage 600.0 V, wide band gap semiconductors},
	doi = {10.1109/IEDM.2017.8268492},
	author = {M. Meneghini and A. Tajalli and P. Moens and A. Banerjee and A. Stockman and M. Tack and S. Gerardin and M. Bagatin and A. Paccagnella and E. Zanoni and G. Meneghesso}
}
