@conference {61,
	title = {On the origin of the leakage current in p-gate AlGaN/GaN HEMTs},
	booktitle = {2018 IEEE International Reliability Physics Symposium (IRPS)},
	year = {2018},
	month = {March},
	abstract = {Temperature dependent DC and double pulse measurements are performed on p-GaN gated AlGaN/GaN enhancement mode power transistors. Devices with improved Schottky metal/p-GaN interface quality and p-GaN sidewall passivation are studied. It is shown that both processes reduce the reverse and forward gate leakage current significantly. This is related to the improved p-GaN sidewall roughness and density of interface states, all contributing to sidewall leakage. Under double pulsed testing, an untreated device shows a negative threshold voltage shift at high forward gate voltage, which is explained by hole trapping in the barrier. Improving the p-GaN sidewall quality reduces the supply of holes towards the p-GaN/AlGaN interface, and a positive threshold voltage shift is observed. This can be explained by electron injection from the channel into the barrier.},
	keywords = {AlGaN-GaN, aluminium compounds, Aluminum gallium nitride, charge injection, double pulse measurement, double pulse measurements, double pulsed testing, electron injection, electron traps, enhancement mode power transistor, gallium compounds, GaN, gate leakage current, HEMT, HEMTs, high electron mobility transistors, high-electron-mobility transistor, hole trap, hole traps, III-V semiconductors, interface quality, interface states, leakage current, leakage currents, Logic gates, MODFETs, ositive threshold voltage shift, p-GaN gate, passivation, power transistors, Schottky barriers, Schottky metal-semiconductor interface quality, semiconductor device breakdown, semiconductor-metal boundaries, sidewall leakage, sidewall passivation, sidewall roughness, temperature dependent DC neasurement, Temperature measurement, wide band gap semiconductors},
	doi = {10.1109/IRPS.2018.8353582},
	author = {A. Stockman and E. Canato and A. Tajalli and M. Meneghini and G. Meneghesso and E. Zanoni and P. Moens and B. Bakeroot}
}
@conference {60,
	title = {Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation},
	booktitle = {2017 IEEE International Electron Devices Meeting (IEDM)},
	year = {2017},
	month = {Dec},
	abstract = {For the first time, we demonstrate that proton irradiation can be an effective tool for achieving zero dynamic-Ron in GaN-based power HEMTs. Based on combined pulsed characterization, transient measurements and hard switching analysis on untreated and irradiated devices we demonstrate the following relevant results: (i) the devices under analysis show an outstanding robustness against 3 MeV proton irradiation, up to a fluence of 1.5{\texttimes}1014cm-2. (ii) For fluences higher than 1013cm-2, the devices show a substantial reduction of dynamic-Ron. At the highest analyzed fluence (1.5{\texttimes}1014cm-2), dynamic-Ron is completely suppressed at 600 V/150 {\textdegree}C, without measurable changes in the gate and sub-threshold leakage and in the threshold voltage. (iii) transient and hard switching analysis indicate the total suppression of the trap-related transients identified before radiation testing. The results are explained by considering that proton irradiation increases the leakage through the uid-GaN channel layer. This increases the detrapping rate, and leads to the suppression of dynamic-Ron at high VDS.},
	keywords = {AlGaN-GaN, aluminium compounds, Current measurement, dynamic-Ron, electron traps, electron volt energy 3.0 MeV, gallium compounds, Gallium nitride, hard switching analysis, HEMT, HEMTs, high electron mobility transistors, III-V semiconductors, MODFETs, power HEMT, proton effects, proton irradiation, Protons, pulsed characterization, Radiation effects, radiation hardening (electronics), radiation testing, semiconductor device testing, subthreshold leakage, Switches, temperature 150.0 degC, threshold voltage, transient measurements, trap-related transients, voltage 600.0 V, wide band gap semiconductors},
	doi = {10.1109/IEDM.2017.8268492},
	author = {M. Meneghini and A. Tajalli and P. Moens and A. Banerjee and A. Stockman and M. Tack and S. Gerardin and M. Bagatin and A. Paccagnella and E. Zanoni and G. Meneghesso}
}
