Scientific Papers

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2020
Abid I., Kabouche R., Medjdoub F., Besendörfer S., Meissner E., Derluyn J., Degroote S., Germain M., Miyake H..  2020.  Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Besendörfer S., Meissner E., Tajalli A., Meneghini M., Freitas J.A, Derluyn J., Medjdoub F., Meneghesso G., Friedrich J., Erlbacher T..  2020.  Vertical breakdown of GaN on Si due to V-pits. Journal of Applied Physics. 127(1):015701.
2019
Borga M., Meneghini M., Benazzi D., Canato E., Püsche R., Derluyn J., Abid I., Medjdoub F., Meneghesso G., Zanoni E..  2019.  Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability. 100-101:113461.
Kabouche R, Abid I, Zegaoui M., Cheng K, Medjdoub F..  2019.  Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects. International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019.
Borga M., Meneghini M., Benazzi D, Püsche R, Derluyn J, Abid I, Medjdoub F., Meneghesso G., Zanoni E..  2019.  GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019.