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Innovative Reliable Nitride-based Power devices and applications

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    • Wide bandgap semiconductors
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    • WP1 - Material and Epitaxy
    • WP2 - Device Processing
    • WP3 - Advanced Characterization & Reliability
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Scientific Papers

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Filters: Author is Meissner, E  [Clear All Filters]
2020
Freitas JJr A, Besendorfer S, Meissner E, Tajalli A, Meneghini M, Derluyn J, Medjdoub F, Meneghesso G, Friedrich J, Erlbacher T.  2020.  Vertical Breakdown of GaN on Si Due to V-Pits.
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News & Press

Milestone reached: over 50 publications

We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!

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Events

Our project goes towards the end, our journey still continues

Our project started back in January 2017.

InRel-NPower for space applications

The InRel-NPower consortium has been invited to present our project at the next Workshop’ on European GaN for Space Application (see

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Tweets by InRel-NPower

This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 720527.

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