We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
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2019. A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability. 2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS).
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2018. Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 65(12):5365-5372.
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2017. Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. Solid-State Device Research Conference (ESSDERC), 2017 47th European.
