Scientific Papers

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2019
Shojiki K, Hayashi Y, Uesugi K, Miyake H.  2019.  Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy. Japanese Journal of Applied Physics. 58(SC):SCCB17.
Xiao S, Jiang N, Shojiki K, Uesugi K, Miyake H.  2019.  Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy. Japanese Journal of Applied Physics. 58(SC):SC1003.
Tanaka S, Shojiki K, Uesugi K, Hayashi Y, Miyake H.  2019.  Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film. Journal of Crystal Growth. 512:16-19.
Uesugi K, Hayashi Y, Shojiki K, Miyake H.  2019.  Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures. Applied Physics Express. 12(6):065501.
Akiyma T, Uchino M, Nakamura K, Ito T, Xiao S, Miyake H.  2019.  Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures. Japanese Journal of Applied Physics. 58(SC):SCCB30.
2018
Yoshizawa R, Miyake H, Hiramatsu K.  2018.  Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics. 57(1S):01AD05.
Xiao S, Suzuki R, Miyake H, Harada S, Ujihara T.  2018.  Improvement mechanism of sputtered AlN films by high-temperature annealing. Journal of Crystal Growth. 502:41-44.
Hayashi Y, Katayama R, Akiyama T, Ito T, Miyake H.  2018.  Polarity inversion of aluminum nitride by direct wafer bonding. Applied Physics Express. 11(3):031003.