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Innovative Reliable Nitride-based Power devices and applications

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    • Wide bandgap semiconductors
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    • WP1 - Material and Epitaxy
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Scientific Papers

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Filters: Author is Jiang, Nan  [Clear All Filters]
2019
Xiao S, Jiang N, Shojiki K, Uesugi K, Miyake H.  2019.  Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy. Japanese Journal of Applied Physics. 58(SC):SC1003.
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News & Press

Milestone reached: over 50 publications

We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!

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Events

Our project goes towards the end, our journey still continues

Our project started back in January 2017.

InRel-NPower for space applications

The InRel-NPower consortium has been invited to present our project at the next Workshop’ on European GaN for Space Application (see

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This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 720527.

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