ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping

TitleESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping
Publication TypeJournal Article
Year of Publication2019
AuthorsCanato E., Meneghini M., Nardo A., Masin F., Barbato A., Barbato M., Stockman A., Banerjee A., Moens P., Zanoni E., Meneghesso G.
JournalMicroelectronics Reliability
Volume100-101
Pagination113334
Date PublishedJan-09-2019
ISSN00262714
DOI10.1016/j.microrel.2019.06.026
Short TitleMicroelectronics Reliability