Scientific Papers

Export 2 results:
Filters: Keyword is high electron mobility transistors and Author is G. Meneghesso  [Clear All Filters]
2018
Stockman A., Canato E., Tajalli A., Meneghini M., Meneghesso G., Zanoni E., Moens P., Bakeroot B..  2018.  On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. 2018 IEEE International Reliability Physics Symposium (IRPS).
2017
Meneghini M., Tajalli A., Moens P., Banerjee A., Stockman A., Tack M., Gerardin S., Bagatin M., Paccagnella A., Zanoni E. et al..  2017.  Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation. 2017 IEEE International Electron Devices Meeting (IEDM).