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Innovative Reliable Nitride-based Power devices and applications

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    • Why this research?
    • Wide bandgap semiconductors
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    • WP1 - Material and Epitaxy
    • WP2 - Device Processing
    • WP3 - Advanced Characterization & Reliability
    • WP4 - Packaging and Demonstration
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GaNonCMOS

News & Press

Milestone reached: over 50 publications

We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!

more news & press

Events

Our project goes towards the end, our journey still continues

Our project started back in January 2017.

InRel-NPower for space applications

The InRel-NPower consortium has been invited to present our project at the next Workshop’ on European GaN for Space Application (see

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Tweets by InRel-NPower

This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 720527.

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