News & Press

We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!

Our project was published in the

InRel-NPower is featured in a prestigious Italian economical newspaper Il Sole 24 ore.

Our second newsletter has been send to over 100 interested subscribers. Also curious in its content?

The wish for easy realization of a GaN-HEMT device leads typically to normally-on devices.

Our project is featured in a recent article of the impact journal. Click here to read more about it!

The InRel-NPower project is featured in the August edition of Bodo's Power Magazine!

Partner IEMN demonstrates that one GaN power transistor can potentially block over 3000V. Click here to learn more.

After 12 months within the InRel-NPower project, we've updated our promotional poster and brochure. Be the first to see them at the GaN Marathon 2.0, April 18-19th 2018!


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