InRel-NPower extended by 6 months

The wish for easy realization of a GaN-HEMT device leads typically to normally-on devices. The fastest way to fulfill the normally-off condition in power electronics system topologies is the cascading of the high performance GaN device with a low-voltage blocking Si-MOSFET device. Nevertheless, using the cascaded configuration has some certain disadvantages on all three technology (sub-)system levels: device level, packaging/module level and aggregate/vehicle level.

These disadvantages led to a shift of device demand during the first phase of our project. Now the demand for a true intrinsic high voltage blocking normally-off GaN devices exists. To achieve this changed objective, the InRel-NPower project was granted a 6-month extention without additional financial recourses.