Scientific Papers

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Filters: Keyword is high-electron-mobility transistor and Author is P. Moens  [Clear All Filters]
2018
Stockman A., Canato E., Tajalli A., Meneghini M., Meneghesso G., Zanoni E., Moens P., Bakeroot B..  2018.  On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. 2018 IEEE International Reliability Physics Symposium (IRPS).