We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
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Filters: Keyword is high-electron-mobility transistor and Author is A. Stockman [Clear All Filters]
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2018. On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. 2018 IEEE International Reliability Physics Symposium (IRPS).
