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Scientific Papers
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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 65(12):5365-5372.
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2018. Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. Solid-State Device Research Conference (ESSDERC), 2017 47th European.
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2017.