The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

TitleThe Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs
Publication TypeJournal Article
Year of Publication2019
AuthorsPavlidis G, Kim SH, Abid I, Zegaoui M, Medjdoub F, Graham S
JournalIEEE Electron Device Letters
Volume40
Issue7
Pagination1060 - 1063
Date PublishedJan-07-2019
ISSN0741-3106
DOI10.1109/LED.5510.1109/LED.2019.2915984
Short TitleIEEE Electron Device Lett.