High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

TitleHigh Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications
Publication TypeJournal Article
Year of Publication2020
AuthorsTajalli A, Meneghini M, Besendörfer S, Kabouche R, Abid I, Püsche R, Derluyn J, Degroote S, Germain M, Meissner E, Zanoni E, Medjdoub F, Meneghesso G
JournalMaterials
Volume13
Issue19
Pagination4271
Date PublishedJan-10-2020
DOI10.3390/ma13194271
Short TitleMaterials