We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures
| Title | Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures |
| Publication Type | Journal Article |
| Year of Publication | 2020 |
| Authors | Besendörfer S., Meissner E., Zweipfennig T., Yacoub H., Fahle D., Behmenburg H., Kalisch H., Vescan A., Friedrich J., Erlbacher T. |
| Journal | AIP Advances |
| Volume | 10 |
| Issue | 4 |
| Pagination | 045028 |
| Date Published | Jan-04-2020 |
| DOI | 10.1063/1.5141905 |
| Short Title | AIP Advances |
