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Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures
Title | Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures |
Publication Type | Journal Article |
Year of Publication | 2020 |
Authors | Besendörfer S., Meissner E., Zweipfennig T., Yacoub H., Fahle D., Behmenburg H., Kalisch H., Vescan A., Friedrich J., Erlbacher T. |
Journal | AIP Advances |
Volume | 10 |
Issue | 4 |
Pagination | 045028 |
Date Published | Jan-04-2020 |
DOI | 10.1063/1.5141905 |
Short Title | AIP Advances |