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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
Title | The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors |
Publication Type | Journal Article |
Year of Publication | 2020 |
Authors | Besendörfer S, Meissner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T |
Journal | Scientific Reports |
Volume | 10 |
Issue | 1 |
Date Published | Jan-12-2020 |
URL | http://www.nature.com/articles/s41598-020-73977-2 |
DOI | 10.1038/s41598-020-73977-2 |
Short Title | Sci Rep |