The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

TitleThe impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
Publication TypeJournal Article
Year of Publication2020
AuthorsBesendörfer S, Meissner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T
JournalScientific Reports
Volume10
Issue1
Date PublishedJan-12-2020
URLhttp://www.nature.com/articles/s41598-020-73977-2
DOI10.1038/s41598-020-73977-2
Short TitleSci Rep