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GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap
Title | GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap |
Publication Type | Journal Article |
Year of Publication | 2018 |
Authors | Dogmus E, Zegaoui M, Medjdoub F |
Journal | Applied Physics Express |
Volume | 11 |
Pagination | 034102 |
Abstract | We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩcenterdotcm2. |
URL | http://iopscience.iop.org/article/10.7567/APEX.11.034102/pdf |
DOI | 10.7567/APEX.11.034102 |