Micro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

TitleMicro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate
Publication TypeConference Paper
Year of Publication2019
AuthorsCanato E., Masin F., Borga M., Zanoni E., Meneghini M., Meneghesso G., Stockman A., Banerjee A., Moens P.
Conference Name2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS)
PublisherIEEE
Conference LocationMonterey, CA, USA
URLhttps://ieeexplore.ieee.org/document/8720549/http://xplorestaging.ieee.org/ielx7/8712125/8720395/08720549.pdf?arnumber=8720549
DOI10.1109/IRPS.2019.8720549