We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
Export 1 results:
Filters: Author is Fahle, D. [Clear All Filters]
Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures. AIP Advances. 10(4):045028.
.
2020.