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Scientific Papers
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Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
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2020. Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability. 100-101:113461.
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2019.