We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
| Title | Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment |
| Publication Type | Journal Article |
| Year of Publication | 2019 |
| Authors | Borga M., Meneghini M., Benazzi D., Canato E., Püsche R., Derluyn J., Abid I., Medjdoub F., Meneghesso G., Zanoni E. |
| Journal | Microelectronics Reliability |
| Volume | 100-101 |
| Pagination | 113461 |
| Date Published | Jan-09-2019 |
| ISSN | 00262714 |
| DOI | 10.1016/j.microrel.2019.113461 |
| Short Title | Microelectronics Reliability |
