We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
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Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures. AIP Advances. 10(4):045028.
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2020. Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
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2020. Vertical breakdown of GaN on Si due to V-pits. Journal of Applied Physics. 127(1):015701.
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2020. Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices. Journal of Applied Physics. 125(9):095704.
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2019.