We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
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Half-bridge Concepts for High Blocking Voltage GaN HEMTs (EU Public Funded Project ‘InRel-NPower ‘. CIPS 2020; 11th International Conference on Integrated Power Electronics Systems.
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2020. High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials. 13(19):4271.
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2020. Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures. physica status solidi (a). 217(7):1900687.
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2020. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment. Micromachines. 11(1):101.
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2020. Degradation physics of GaN-based lateral and vertical devices. Gallium Nitride Materials and Devices XIVGallium Nitride Materials and Devices XIV.
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2019. GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability. 2019 Electron Devices Technology and Manufacturing Conference (EDTM)2019 Electron Devices Technology and Manufacturing Conference (EDTM).
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2019. The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics. 51(16):163001.
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2018. Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 65(12):5365-5372.
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2018. Innovative Reliable Nitride based Power Devices and Applications-The EU Public Funded Project'InRel-NPower'. CIPS 2018; 10th International Conference on Integrated Power Electronics Systems.
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2018. Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. PP(99):1-6.
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2017.