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Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress
| Title | Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress |
| Publication Type | Journal Article |
| Year of Publication | 2019 |
| Authors | Masin F., Meneghini M., Canato E., De Santi C., Stockman A., Zanoni E., Moens P., Meneghesso G. |
| Journal | Applied Physics Letters |
| Volume | 115 |
| Issue | 5 |
| Pagination | 052103 |
| Date Published | May-07-2021 |
| ISSN | 0003-6951 |
| URL | http://aip.scitation.org/doi/10.1063/1.5109301 |
| DOI | 10.1063/1.5109301 |
| Short Title | Appl. Phys. Lett. |
