Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

TitlePositive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress
Publication TypeJournal Article
Year of Publication2019
AuthorsMasin F., Meneghini M., Canato E., De Santi C., Stockman A., Zanoni E., Moens P., Meneghesso G.
JournalApplied Physics Letters
Volume115
Issue5
Pagination052103
Date PublishedMay-07-2021
ISSN0003-6951
URLhttp://aip.scitation.org/doi/10.1063/1.5109301
DOI10.1063/1.5109301
Short TitleAppl. Phys. Lett.