We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
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Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
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2020. Vertical breakdown of GaN on Si due to V-pits. Journal of Applied Physics. 127(1):015701.
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2020. Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability. 100-101:113461.
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2019. Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects. International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019.
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2019. GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019.
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