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Scientific Papers
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Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress. Applied Physics Letters. 115(5):052103.
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2019. Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 64(9):3734-3739.
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2017.