We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
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Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability. 100-101:113461.
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2019. GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019.
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2019. Micro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. 2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS).
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2019.