We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
Export 9 results:
Filters: Author is Zanoni, E. [Clear All Filters]
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability. 100-101:113461.
.
2019. The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 66(1):372-377.
.
2019. ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping. Microelectronics Reliability. 100-101:113334.
.
2019. GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019.
.
2019. Micro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. 2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS).
.
2019. Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress. Applied Physics Letters. 115(5):052103.
.
2019. Dynamic-ron control via proton irradiation in AlGaN/GaN transistors. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
.
2018. Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectronics Reliability. 88-90:572-576.
.
2018. Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 64(9):3734-3739.
.
2017.