We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
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Filters: Author is Hayashi, Yusuke [Clear All Filters]
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2019. Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy. Japanese Journal of Applied Physics. 58(SC):SCCB17.
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2019. Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film. Journal of Crystal Growth. 512:16-19.
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2019. Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures. Applied Physics Express. 12(6):065501.
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2018. Polarity inversion of aluminum nitride by direct wafer bonding. Applied Physics Express. 11(3):031003.
