We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
Export 51 results:
Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices. Journal of Applied Physics. 125(9):095704.
.
2019. Micro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. 2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS).
.
2019. A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability. 2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS).
.
2019. Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress. Applied Physics Letters. 115(5):052103.
.
2019. Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy. Japanese Journal of Applied Physics. 58(SC):SC1003.
.
2019. Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film. Journal of Crystal Growth. 512:16-19.
.
2019. Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures. Applied Physics Express. 12(6):065501.
.
2019. Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures. Japanese Journal of Applied Physics. 58(SC):SCCB30.
.
2019. The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics. 51(16):163001.
.
2018. Dynamic-ron control via proton irradiation in AlGaN/GaN transistors. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
.
2018. Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics. 57(1S):01AD05.
.
2018. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap. Applied Physics Express. 11:034102.
.
2018. Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 65(12):5365-5372.
.
2018. Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectronics Reliability. 88-90:572-576.
.
2018. Improvement mechanism of sputtered AlN films by high-temperature annealing. Journal of Crystal Growth. 502:41-44.
.
2018. Innovative Reliable Nitride based Power Devices and Applications-The EU Public Funded Project'InRel-NPower'. CIPS 2018; 10th International Conference on Integrated Power Electronics Systems.
.
2018. On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. 2018 IEEE International Reliability Physics Symposium (IRPS).
.
2018. Polarity inversion of aluminum nitride by direct wafer bonding. Applied Physics Express. 11(3):031003.
.
2018. Trapping phenomena and degradation mechanisms in GaN-based power HEMTs. Materials Science in Semiconductor Processing. 78:118-126.
.
2018. DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1¯) metalorganic vapor phase epitaxy. Applied Physics Letters. 111
.
2017. Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. PP(99):1-6.
.
2017. Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 64(9):3734-3739.
.
2017. .
2017. Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. Solid-State Device Research Conference (ESSDERC), 2017 47th European.
.
2017. Thermodynamic analysis of (0001) and $(000\bar{1})$ GaN metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics. 56(7):070304.
.
2017.