Scientific Papers

Export 51 results:
2019
Besendörfer S., Meissner E., Lesnik A., Friedrich J., Dadgar A., Erlbacher T..  2019.  Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices. Journal of Applied Physics. 125(9):095704.
Canato E., Masin F., Borga M., Zanoni E., Meneghini M., Meneghesso G., Stockman A., Banerjee A., Moens P..  2019.  Micro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. 2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS).
Moens P, Stockman A.  2019.  A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability. 2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS).
Masin F., Meneghini M., Canato E., De Santi C., Stockman A., Zanoni E., Moens P., Meneghesso G..  2019.  Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress. Applied Physics Letters. 115(5):052103.
Xiao S, Jiang N, Shojiki K, Uesugi K, Miyake H.  2019.  Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy. Japanese Journal of Applied Physics. 58(SC):SC1003.
Tanaka S, Shojiki K, Uesugi K, Hayashi Y, Miyake H.  2019.  Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film. Journal of Crystal Growth. 512:16-19.
Uesugi K, Hayashi Y, Shojiki K, Miyake H.  2019.  Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures. Applied Physics Express. 12(6):065501.
Akiyma T, Uchino M, Nakamura K, Ito T, Xiao S, Miyake H.  2019.  Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures. Japanese Journal of Applied Physics. 58(SC):SCCB30.
2018
Amano H, Baines Y, Beam E, Borga M, Bouchet T, Chalker PR, Charles M, Chen KJ, Chowdhury N, Chu R et al..  2018.  The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics. 51(16):163001.
Tajalli A., Stockman A., Meneghini M., Mouhoubi S., Banerjee A., Gerardin S., Bagatin M., Paccagnella A., Zanoni E., Tack M. et al..  2018.  Dynamic-ron control via proton irradiation in AlGaN/GaN transistors. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Yoshizawa R, Miyake H, Hiramatsu K.  2018.  Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics. 57(1S):01AD05.
Dogmus E, Zegaoui M, Medjdoub F.  2018.  GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap. Applied Physics Express. 11:034102.
Stockman A, Masin F, Meneghini M, Zanoni E, Meneghesso G, Bakeroot B, Moens P.  2018.  Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 65(12):5365-5372.
Tajalli A., Canato E., Nardo A., Meneghini M., Stockman A., Moens P., Zanoni E., Meneghesso G..  2018.  Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectronics Reliability. 88-90:572-576.
Xiao S, Suzuki R, Miyake H, Harada S, Ujihara T.  2018.  Improvement mechanism of sputtered AlN films by high-temperature annealing. Journal of Crystal Growth. 502:41-44.
Rittner M, Kessler U, Naundorf J, Kriegel K, Schulz M, Meneghesso G.  2018.  Innovative Reliable Nitride based Power Devices and Applications-The EU Public Funded Project'InRel-NPower'. CIPS 2018; 10th International Conference on Integrated Power Electronics Systems.
Stockman A., Canato E., Tajalli A., Meneghini M., Meneghesso G., Zanoni E., Moens P., Bakeroot B..  2018.  On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. 2018 IEEE International Reliability Physics Symposium (IRPS).
Hayashi Y, Katayama R, Akiyama T, Ito T, Miyake H.  2018.  Polarity inversion of aluminum nitride by direct wafer bonding. Applied Physics Express. 11(3):031003.
Meneghini M, Tajalli A, Moens P, Banerjee A, Zanoni E, Meneghesso G.  2018.  Trapping phenomena and degradation mechanisms in GaN-based power HEMTs. Materials Science in Semiconductor Processing. 78:118-126.
2017
Kempisty P, Kangawa Y, Kusaba A, Shiraishi K, Krukowski S, Bockowski M, Kakimoto K, Amano H.  2017.  DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1¯) metalorganic vapor phase epitaxy. Applied Physics Letters. 111
Rossetto I, Meneghini M, Tajalli A, Dalcanale S, Santi C, Moens P, Banerjee A, Zanoni E, Meneghesso G.  2017.  Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. PP(99):1-6.
Rossetto I., Meneghini M., Tajalli A., Dalcanale S., De Santi C., Moens P., Banerjee A., Zanoni E., Meneghesso G..  2017.  Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 64(9):3734-3739.
Kusaba A, Li G, von Spakovsky MR, Kangawa Y, Kakimoto K.  2017.  Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics. Materials. 10(8)
Stockman A, Uren M, Tajalli A, Meneghini M, Bakeroot B, Moens P.  2017.  Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. Solid-State Device Research Conference (ESSDERC), 2017 47th European.
Kusaba A, Kangawa Y, Kempisty P, Valencia H, Shiraishi K, Kumagai Y, Kakimoto K, Koukitu A.  2017.  Thermodynamic analysis of (0001) and $(000\bar{1})$ GaN metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics. 56(7):070304.

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